The interplay of field-tunable strongly correlated states in Γ and K moiré bands in a heterotrilayer device

POSTER

Abstract

In twisted transition metal dichalcogenide (TMD) heterobilayer systems the moiré bands that form the highest valence band generally arise from K-derived states. However, as more layers are added for naturally stacked TMDs the Γ valley becomes energetically relevant. Here, we optically probe the exciton-polarons in the presence of correlated states in a heterotrilayer 2H-bilayer WSe2/monolayer MoSe2 moiré heterostructure. We observe the formation of exciton-polarons where the direct exciton at ±K is dressed by holes residing in Γ derived moiré bands, evidenced by their distinctive hole-doping dependent dispersions. As the number of holes per moiré unit cell is tuned, abrupt changes of the attractive polarons reveal the formation of strongly correlated hole states within the Γ bands at both integer and intermediate fractional fillings. Upon application of a vertical electric field we change the ordering of Γ- and K-derived bands and transfer holes between Γ and K correlated states. Further, the WSe2 attractive polarons dressed by the Γ and K correlated holes reveal contrasting polarisation properties under an applied magnetic field. The results are fully supported by density functional theory calculations which show highest Γ band projects onto a honeycomb lattice with inequivalent A and B sites, while the K band forms a triangular lattice. Our results reveal the potential of heterotrilayer TMDs for Hubbard model investigations for both honeycomb and triangular lattices within the same devices.

Publication: The interplay of field-tunable strongly correlated states in Gamma and K moiré bands in a heterotrilayer device (manuscript in preparation)

Presenters

  • Aidan J Campbell

    • Heriot-Watt Univ
    • Heriot-Watt University

Authors

  • Aidan J Campbell

    • Heriot-Watt Univ
    • Heriot-Watt University
  • Valerio Vitale

    • Imperial College London
    • Università di Trieste
  • Shun Feng

    • Heriot-Watt Univ
    • Heriot-Watt University
  • Hyeonjun Baek

    • Heriot-Watt Univ
    • Heriot-Watt University
  • Kenji Watanabe

    • National Institute for Materials Science
    • Research Center for Functional Materials, National Institute of Materials Science
    • Research Center for Functional Materials, National Institute for Materials Science, 1-1 Namiki, Tsukuba 305-044, Japan
    • NIMS
    • Research Center for Functional Materials, National Institute for Materials Science
    • National Institute for Materials Science, Japan
    • Research Center for Functional Materials, National Institute for Materials Science, Tsukuba, Japan
    • NIMS Japan
  • Takashi Taniguchi

    • National Institute for Materials Science
    • Kyoto Univ
    • International Center for Materials Nanoarchitectonics, National Institute of Materials Science
    • Kyoto University
    • International Center for Materials Nanoarchitectonics, National Institute for Materials Science, 1-1 Namiki, Tsukuba 305-044, Japan
    • International Center for Materials Nanoarchitectonics, National Institute for Materials Science
    • National Institute for Materials Science, Japan
    • National Institute For Materials Science
    • NIMS
    • National Institute for Material Science
    • International Center for Materials Nanoarchitectonics, National Institute for Materials Science, Tsukuba, Japan
    • NIMS Japan
  • Jonathan Ruhman

    • Bar Ilan University
    • Bar-Ilan University
    • Massachusetts Institute of Technology MIT
  • Johannes C Lischner

    • Imperial College London
  • Brian D Gerardot

    • Heriot-Watt Univ
    • Heriot-Watt University