Transport characterization of Bismuth alloys with the goal of studying dislocations

This project focuses on the electrical properties of Bi-Sb alloys with the goal of identifying transport through dislocations. Bi_1-xSb_x (0.07-4 Ωm at 2K which we predict to be sufficiently large to resolve current through dislocations for samples with a dislocation density higher than 10⁹ cm^-2. To generate dislocations we will employ in-situ compression using a Razorbill strain cell. In order to quantify transport through dislocations, we will determine dislocation densities using electron channeling contrast imaging.