Transition Metal Dichalcogenide Heterojunction Based Memristor With Increased Endurance

Transition metal dichalcogenide (TMD) heterojunction based memristors have recently been shown to have improved endurance compared to memristors based on monolayer TMDs as the switching layer^[1,2]. High endurance is necessary for 2D material based memristors to be viable for real-life applications^[3]. Studying the switching mechanism of the memristor device is a key step towards increasing the endurance. Here we use a TMD heterojunction as a switching layer. Each 2D material component has dopants of different types and controllable densities. We also use few-layer graphene electrodes to further improve the device performance. The TMDs are grown via chemical vapor deposition (CVD), which allows for the incorporation of dopants. The graphene electrodes are either exfoliated or grown via low pressure CVD. Graphene electrodes eliminate the impact from noble metals to the switching mechanism and will help to prevent the accumulation of metal ions that would have migrated from the noble metal electrodes. We also use various characterization techniques to further study the switching mechanism of these memristor devices, aiming to increase their endurance.

References:

1. Nanoscale, 2021,13, 11497-11504.

2. Appl. Phys. Lett. 121, 233501 (2022).

3. Science and Technology of Advanced Materials, 24(1), 2162323.