Ab-Initio Computations of Electronic and Related Properties of Hexagonal ZrS2

ORAL

Abstract

We have performed ab-initio, self-consistent calculations of electronic, transport, and bulk properties of hexagonal ZrS2. Our computations employed the local density approximation (LDA) potential of Ceperley and Alder and the linear combination of atomic orbital (LCAO) formalism. We performed a generalized minimization of the energy using successive, self-consistent calculations with augmented basis sets to reach the ground state of the material, without employing over-complete basis sets. The bulk h-ZrS2 is in the hexagonal structure with the space group Pm1 and Pearson symbol hP3 (#164). Calculations are performed for a room temperature lattice constant of a = 3.69 Å and c = 6.04 Å. We discuss the band gap, the total and partial densities of states, electron and hole effective masses, and the bulk modulus.

Presenters

  • Alle Dioum

    Department of Physics, Cheick Anta Diop University (UCAD), Dakar, Senegal

Authors

  • Alle Dioum

    Department of Physics, Cheick Anta Diop University (UCAD), Dakar, Senegal

  • YURIY MALOZOVSKY

    Southern University and A&M College

  • Diola Bagayoko

    Department of Mathematics and Physics, Southern University and A&M College in Baton Rouge (SUBR, Baton Rouge, Louisiana 70813, USA, Southern University and A&M College