Ab-Initio Computations of Electronic and Related Properties of Hexagonal ZrS2
ORAL
Abstract
We have performed ab-initio, self-consistent calculations of electronic, transport, and bulk properties of hexagonal ZrS2. Our computations employed the local density approximation (LDA) potential of Ceperley and Alder and the linear combination of atomic orbital (LCAO) formalism. We performed a generalized minimization of the energy using successive, self-consistent calculations with augmented basis sets to reach the ground state of the material, without employing over-complete basis sets. The bulk h-ZrS2 is in the hexagonal structure with the space group Pm1 and Pearson symbol hP3 (#164). Calculations are performed for a room temperature lattice constant of a = 3.69 Å and c = 6.04 Å. We discuss the band gap, the total and partial densities of states, electron and hole effective masses, and the bulk modulus.
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Presenters
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Alle Dioum
Department of Physics, Cheick Anta Diop University (UCAD), Dakar, Senegal
Authors
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Alle Dioum
Department of Physics, Cheick Anta Diop University (UCAD), Dakar, Senegal
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YURIY MALOZOVSKY
Southern University and A&M College
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Diola Bagayoko
Department of Mathematics and Physics, Southern University and A&M College in Baton Rouge (SUBR, Baton Rouge, Louisiana 70813, USA, Southern University and A&M College