Interacting Random-field Dipole Defect Model for Heating in Semiconductor-based Qubit Devices

Semiconductor qubit devices suffer from the drift of the qubit operating frequency in the course of operations. This effect is related to the heating of the system as gate operations are applied. We show that the main features of this phenomenon can be explained by the two-level systems that can also produce charge noise, if these systems are considered to form an interacting random-field glass. The most striking feature of the theory is that the frequency shift can be non-monotonic in temperature. We present analytic and numerical results for the model. Agreement of theory and experiment is good, but there are also significant aspects of the experiments that remain unexplained. Future directions and remaining questions are discussed.