Aligned Graphene/Hexagonal Boron Nitride Heterostructures as a Quantum Dot Canvas

Quantum dots (QD) are a perennial device testbed for the development of novel quantum sensors, bits, and simulators. Two-dimensional materials are atomically-thin and exhibit versatile properties when stacked onto one another. Their small lateral dimensions facilitate compacting many components into one device, enabling ultra high density quantum dot devices. There are a wide variety of heterostructure configurations that provide the necessary high tunability for QD devices. One such configuration consists of graphene (G) mated to hexagonal boron nitride (hBN) with aligned lattices. This configuration results in graphene with a band gap, a critical component for a QD device. In this presentation I will discuss the fabrication and characterization of aligned G/hBN heterostructures. Sample fabrication was done via polymer transfer method while sample characterization was done by Atomic Force Microscopy (AFM) and Piezo Force Microscopy (PFM). Such characterization yields critical topographical information and moire characteristics that will be utilized to determine sample viability for QD devices.

This work is supported by the Gordon and Betty Moore Foundation: Gordon and Betty Moore Foundation Grant DOI: 10.37807/GBMF11569