Understanding tunable near-zero-field magnetoresistance in Si MOSFETs

ORAL

Abstract

Near-zero-field magnetoresistance (NZFMR) is a phenomenon that exists in a variety of semiconductor devices which contain paramagnetic defect centers. It is observed as a magnetic-field-dependent change in device current centered around zero applied field. NZFMR responses have already been shown to contain atomic-scale information about electron-nuclear hyperfine interactions at the paramagnetic defects involved in the process, making them a useful tool for defect identification [1,2]. In this work, we explore the tunability of the NZFMR response in Si metal-oxide-semiconductor field effect transistors using four different detection techniques. We connect the trends in NZMFR lineshape to underlying kinetics using an adaptation of the stochastic quantum Liouville equation [3]. Several potential applications of NZFMR tunability are also discussed, including semiconductor device reliability, NZFMR-based magnetometry, and quantum biology.

[1] J. P. Ashton et al., IEEE Transactions on Nuclear Science, 66, 1, (2019).

[2] E. B. Frantz et al., Journal of Applied Physics, 128.12 (2020): 124504.

[3] N. J. Harmon, et al. IEEE transactions on nuclear science, 67.7 (2020): 1669-1673.

* This project was sponsored in part by the Department of Defense, Defense Threat Reduction Agency under grant numbers HDTRA1-18-0012 and HDTRA1-16- 0008. The content of the information does not necessarily reflect the position or the policy of the federal government, and no official endorsement should be inferred.

Publication: S.J. Moxim, et al., "Tunable Zero-Field Magnetoresistance Responses in Si MOSFETs: Origins and Applications". In preparation for submission to Journal of Applied Physics, expected 2024.

Presenters

  • Stephen J Moxim

    National Institute of Standards and Technology

Authors

  • Stephen J Moxim

    National Institute of Standards and Technology

  • Nicholas J Harmon

    Coastal Carolina University

  • Kenneth J Myers

    Pennsylvania State University

  • James P Ashton

    Keysight

  • Elias B Frantz

    Pennsylvania State University

  • Michael E Flatté

    University of Iowa, Department of Physics and Astronomy, University of Iowa

  • Patrick M Lenahan

    Pennsylvania State University

  • Jason T Ryan

    National Institute of Standards and Technology