Understanding tunable near-zero-field magnetoresistance in Si MOSFETs
ORAL
Abstract
[1] J. P. Ashton et al., IEEE Transactions on Nuclear Science, 66, 1, (2019).
[2] E. B. Frantz et al., Journal of Applied Physics, 128.12 (2020): 124504.
[3] N. J. Harmon, et al. IEEE transactions on nuclear science, 67.7 (2020): 1669-1673.
* This project was sponsored in part by the Department of Defense, Defense Threat Reduction Agency under grant numbers HDTRA1-18-0012 and HDTRA1-16- 0008. The content of the information does not necessarily reflect the position or the policy of the federal government, and no official endorsement should be inferred.
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Publication: S.J. Moxim, et al., "Tunable Zero-Field Magnetoresistance Responses in Si MOSFETs: Origins and Applications". In preparation for submission to Journal of Applied Physics, expected 2024.
Presenters
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Stephen J Moxim
National Institute of Standards and Technology
Authors
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Stephen J Moxim
National Institute of Standards and Technology
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Nicholas J Harmon
Coastal Carolina University
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Kenneth J Myers
Pennsylvania State University
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James P Ashton
Keysight
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Elias B Frantz
Pennsylvania State University
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Michael E Flatté
University of Iowa, Department of Physics and Astronomy, University of Iowa
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Patrick M Lenahan
Pennsylvania State University
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Jason T Ryan
National Institute of Standards and Technology