Strain-induced transport phenomena and scalar potential in CMOS compatible graphene devices

The extended range of elasticity and deformability in 2D materials enables improved flexible or strain-induced device performance compared with bulk materials. However, various methods to induce strain in 2D materials, such as pre-strained flexible substrates or AFM tip bending and bubbles, are incompatible with CMOS techniques. Here, we present results on graphene strained by deposition of overlaying MgO films. We show that 0.3% tensile strain induces a shift in charge neutral point equivalent to 4.5*10¹²cm^-2 hole doping effect, leading to a transition from n-type to p-type behaviour. Furthermore, Raman spectroscopy maps show that the MgO creates a non-uniform strain distribution determined by the geometry of the film. This observation confirms a promising approach to studing strain gradients and corresponding quantum phenomena, such as pseudo-potentials.