Utilizing the Structural Phases of MoS₂ to Create More Secure Transistors and Hardware

Finding ways to protect our technology from intellectual theft has become increasingly needed in recent years. While most people think of technology security in terms of software, many neglect the need to bolster the protection of our hardware. With the US pushing towards being a lead innovator in metal-oxide semiconductor field-effect transistors (MOSFETs), our innovations need to be protected from being stolen through reverse engineering. To aid this endeavor, we propose an alternative method of making MOSFETs by utilizing the structural phases of molybdenum di-sulfide (MoS₂) . Using a 30kV electron beam at 500pA, we expose the MoS₂ flakes mounted on a SiO₂ substrate to a variety of electron beam doses to create patterns of its 1T metallic phase surrounded by the rest of its 2H semiconductor phase. Through this method, di-material logic gates are possible, which will negate traditional reverse engineering techniques and will substantially fortify device security as a result.