Transport through gate-controlled graphene quantum dots

ORAL

Abstract

Quantum dots (QDs) are zero-dimensional materials formed by the confinement effect of electrons inside a potential well, resulting in a discrete energy level like atoms. Their properties can be tuned to fit advanced technologies and industrial applications; for instance, they are considered prominent candidates for qubits, the building block of a quantum computer, single electron transistors, charge sensors, and spin filters. In the framework of quantum transport we investigate the properties of graphene QD devices under the effect of a gate electrode, using numerical simulations and theoretical models: non-equilibrium green’s function (NEGF), density functional theory (DFT), and tight binding (TB).

* OCP Foundation has supported this work with the project grant AS70, "Towards phosphorene-based materials and devices, and with the support of the Chair "Multiphysics and HPC" led by Mohammed VI Polytechnic University. We acknowledge the High-Performance Computing (HPC) Facility of Mohammed VI Polytechnic University – Toubkal.

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Presenters

  • Mohamed Amine Rhanbouri

    Institute of Applied Physics, Mohammed VI Polytechnic University, Lot 660, Hay Moulay Rachid Ben Guerir, 43150, Morocco.

Authors

  • Mohamed Amine Rhanbouri

    Institute of Applied Physics, Mohammed VI Polytechnic University, Lot 660, Hay Moulay Rachid Ben Guerir, 43150, Morocco.

  • Hanan ABSIKE

    Institute of Applied Physics, Mohammed VI Polytechnic University, Lot 660, Hay Moulay Rachid Ben Guerir, 43150, Morocco.

  • Abdelouahed El Fatimy

    Mohammed VI polytechnic University, Institute of Applied Physics, Mohammed VI Polytechnic University, Lot 660, Hay Moulay Rachid, Ben Guerir, 43150, Morocco., Institute of Applied Physics, Mohammed VI Polytechnic University, Lot 660, Hay Moulay Rachid Ben Guerir, 43150, Morocco., Institute of Applied Physics, Mohammed VI Polytechnic University, Lot 660, Hay Moulay Rachid Ben Guerir, 43150, Morocco