Synthesis and Characterization of a Zirconium (Zr) Thin Film on Si(100) via Pulsed Laser Deposition

Zirconium (Zr) thin layers were deposited onto silicon substrates using pulsed laser deposition (PLD) employing two different laser wavelengths (1064 nm and 532 nm). Meanwhile, the substrate temperatures (25°C, 300°C, and 500°C) and laser fluences (0.25, 0.5, 1.0 J/cm²) were varied during the process. The findings demonstrate that the use of 1064 nm laser led to the creation of smoother films, whereas higher laser fluences resulted in increased surface roughness. The most optimal crystalline films were achieved when the substrate temperature was set at 300°C. Detailed analysis using X-ray diffraction (XRD), scanning electron microscopy (SEM), and atomic force microscopy (AFM) brought to light distinct patterns and peaks associated with different laser parameters. The growth mechanisms of a Zr film were computed based on a well-known continuum model of thin film growth. Our simulations agree with experimental observations. The study highlights crucial factors affecting Zr thin film deposition and provides insights for optimizing PLD parameters to achieve high-quality films.