High volume characterization techniques for industry manufactured Si/SiGe spin qubit devices

As spin qubit devices advance in size and complexity, improvements in component yield and process variation will be increasingly necessary to obtain high performance devices. Towards this end, high volume cryogenic measurement will be critical both to optimize fabrication processes as well as to identify the highest performing devices to package in a quantum computing stack. In this talk we review measurement techniques from the Intel Quantum Hardware group to characterize industry manufactured spin qubit devices with a 300 mm cryogenic wafer prober at 1.6 K. We present the latest high-volume data on Intel's spin qubit process and demonstrate how advances in spin qubit component yield combined with a low disorder Si/SiGe host material lead to a high success rate for spin qubit applications.