Development of 2D Semiconductor Oxide Based on β-TeO2 with Room Temperature Broad Photoluminescence

ORAL

Abstract

2D oxide semiconductors with large band-gap have gained significant attention for the development of high-performance and energy-efficient electronics. Recently, there have been few theoretical investigations on β-phase TeO2. Moreover, only a handful of experimental work has been demonstrated, which shows β-TeO2 transistors exhibit a high-mobility p-type semiconductor with hole mobility up to ~232 cm2 V-1 s-1 at room temperature and a band gap in the range of 3.2 to 3.7 for bulk to monolayer, respectively. Here, we report a reliable and well-controlled method to form layered β-TeO2 large band gap semiconductor obtained via deterministic laser-induced oxidation of exfoliated β-Te. We show Raman signatures of β-TeO2 readily after laser oxidation. This 2D wide bandgap semiconductor possesses a broad photoluminescence (PL) spectrum with multiple peaks covering the range 1.76 eV to 2.08 eV. This optical emission indicates a strong exciton binding energy which is estimated to reach ~1.54 eV to 1.6 eV. This work highlights important methods to obtain 2D oxide semiconductor with large band gap for electronic and photonic applications.

* Center of Excellence for Green Nanotechnologies, King Abdulaziz City for Science and Technology, Riyadh, Saudi Arabia, 11442Department of Electrical and Computer Engineering, Viterbi School of Engineering, University of Southern California, Los Angeles, CA, 90089, USADepartment of Electrical Engineering, Henry Samueli School of Engineering, University of California, Los Angeles, Los Angeles, CA, 90095, United States

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Publication: • Aljalham, Ghadeer, Sarah Alsaggaf, Shahad Albawardi, Majed Alharbi, Khalid Alhamdan, Sarah Alodan, Abrar Alhazmi et al. "Deterministic Layer Thinning of Exfoliated Tellurene and Room Temperature Photoluminescence with Large Exciton Binding Energy Observed in TeO2." arXiv preprint arXiv:2302.14394 (2023).
• Alsulami A, Alharbi M, Alsaffar F, Alolaiyan O, Aljalham G, Albawardi S, Alsaggaf S, Alamri F, Tabbakh TA, Amer MR. Lattice Transformation from 2D to Quasi 1D and Phonon Properties of Exfoliated ZrS2 and ZrSe2. Small. 2023.
• Chen M, Cui D, Wang N, Weng S, Zhao Z, Tian F, Gao X, He K, Chiang CT, Albawardi S, Alsaggaf S. Inkjet-Printed MoS2 Nanoplates on Flexible Substrates for High-Performance Field Effect Transistors and Gas Sensing Applications. ACS Applied Nano Materials. 2023.
• Alhazmi A, Alolaiyan O, Alharbi M, Alghamdi S, Alsulami A, Alamri F, Albawardi S, Aljalham G, Alsaggaf S, Alhamdan K, Amer MR. van der Waals Doping and Room Temperature Resonant Tunneling Observed in Black Phosphorus/Germanium Sulfide Transistors. Advanced Functional Materials. 2022.
• Alsaggaf, Sarah, Raja Shahid Ashraf, Balaji Purushothaman, Neha Chaturvedi, Iain McCulloch, Frédéric Laquai, and Jafar Iqbal Khan. "Efficiency Limits in Wide‐Bandgap Ge‐Containing Donor Polymer: Nonfullerene Acceptor Bulk Heterojunction Solar Cells." physica status solidi (RRL)–Rapid Research Letters 15, no. 12 2021.
• Albawardi S, Alghamdi S, Alamri F, Alsaggaf S, Aljalham G, Alharbi M, Aljoudi H, Alolaiyan O, Amer MR. Low-Cost, Homogeneous, and Continuous Thin Film of 2D Semiconductors: Towards Large Scale Electronic and Photonic Devices. In2021 IEEE 16th Nanotechnology Materials and Devices Conference (NMDC) 2021.

Presenters

  • Sarah M Alsaggaf

    King Abdulaziz City Science & Technology (KACST)

Authors

  • Sarah M Alsaggaf

    King Abdulaziz City Science & Technology (KACST)

  • Shahad Albawardi

    King Abdulaziz City Science & Technology (KACST)

  • Mohammed R Amer

    King Abdulaziz City for Science and Technology, Department of Electrical Engineering, Henry Samueli School of Engineering, University of California, Los Angeles, CA, King Abdulaziz City Science & Technology (KACST), UCLA and USC