A Computational Study of Electrostatically-Doped Silicene and Graphene Nanoribbon FETs

This study investigates nanoribbon width variations in Electrically Doped Silicon Nanoribbon Field-Effect Transistors (ED SiNR-FET) and Graphene Nanoribbon Field-Effect Transistors (GNR-FET) to optimize transistor channel width for enhanced performance. Results demonstrate the ED SiNR-FET's superior resilience to impurities, establishing it as the top performer. The systematic evaluation identifies the most conducive nanoribbon width for heightened device performance. The introduction of the extended channel ED-device (ECED) reveals a significantly improved I_ON/I_OFF ratio compared to GNR-FET across various channel lengths. A detailed analysis of a 15 nm ECED SiNR-FET and an 8 nm channel GNR-FET under diverse conditions highlights the ECED's potential for both low-power (LP) and high-performance (HP) applications. The ECED SiNR-FET exhibits a minimal subthreshold swing of 64 mV/dec and a peak transconductance of 63 µS, making it suitable for LP and HP applications, respectively. This research demonstrates ED SiNR-FET's superiority over GNR-FET and underscores the potential of ECED SiNR-FET, presenting better I_ON/I_OFF ratio, subthreshold swing, and transconductance characteristics. This research introduces an innovative transistor design for future CMOS technology.