Investigating Ferroelectricity in bulk Tellurium doped Tin Sulfide (SnSTe)
ORAL
Abstract
Under strain gradients, polarization could spontaneously develop locally around the source of the strain. Since other piezoelectric coefficients contribute to out-of-plane deflections, the departure from perfect flatness of bulk crystals could lead to the presence of non-zero out-of-plane polarization. The insertion of larger atomic radius tellurium into ferroelectric bulk tin sulfide (SnS) is expected to add local strain gradients within the host crystal in addition to breaking the centrosymmetry of the bulk SnS. By using bottom-up synthesis method of chemical vapour deposition (CVD), we successfully synthesize in this work bulk tellurium doped SnS. Analysis has been done via optical microscopy, atomic force microscopy, piezoresponse force microscopy, Raman spectroscopy and X-Ray photoelectron spectroscopy with a confirmation of successful synthesis of the Te doped alloy. Ideal synthesis parameters in our CVD setup has been identified via systematic limit testing of the parameters. We show in this work the result of our work towards the observation of piezoelectric coupling in the bulk phase of materials which is critical in technological applications where minimal thickness is not necessary.
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Presenters
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Bamidele O Onipede
University of California, Merced
Authors
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Bamidele O Onipede
University of California, Merced
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Hui Cai
University of California, Merced
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Matthew E Metcalf
University of California, Merced