Oral: Quadrupolar excitons and hybridized interlayer Mott insulator in a trilayer moiré superlattice

ORAL

Abstract

Transition metal dichalcogenide moiré heterojunctions in the type II alignment host not only interlayer excitons with permanent dipole moments but also exhibit novel correlated physics, owing to the presence of moiré flatbands. In this work, we present a new excitonic state, interlayer quadrupolar exciton in an angle-aligned symmetric WSe2/WS2/WSe2 trilayer heterojunction. The quadrupolar exciton stems from the valence band hybridization. The interlayer excitons in the top and bottom bilayers exhibit opposite polarities. Their hybridization forms a superposition state of interlayer exciton, giving rise to a quadrupolar exciton, with an around 12meV energy difference between dipolar exciton and quadrupolar exciton under a net zero electric field. In the presence of moiré coupling, this hybridization further gives rise to a new type of correlated electronic state, hybridized interlayer Mott insulator, in which the correlated holes are shared between the two WSe2 layers. The unique trilayer moiré system offers a new exciting playground for realizing novel correlated states and manipulating quantum phase transition.








Presenters

  • Lei Ma

    Rensselaer Polytechnic Institute

Authors

  • Lei Ma

    Rensselaer Polytechnic Institute

  • Zhen Lian

    Rensselaer Polytechnic Institute

  • Dongxue Chen

    Rensselaer Polytechnic Institute

  • Yuze Meng

    Rensselaer Polytechnic Institute

  • Ying Su

    University of Texas at Dallas

  • Li Yan

    Rensselaer polytechnic institute, Rensselaer Polytechnic Institute

  • Xiong Huang

    University of California, Riverside

  • Qiran Wu

    University of California, Riverside

  • Xinyue Chen

    Rensselaer polytechnic institute, Rensselaer Polytechnic Institute

  • Mark Blei

    Arizona State University

  • Takashi Taniguchi

    Kyoto Univ, National Institute for Materials Science, Research Center for Materials Nanoarchitectonics, Research Center for Materials Nanoarchitectonics, National Institute for Materials Science, National Institute for Materials Sciences, NIMS, International Center for Materials Nanoarchitectonics, National Institute for Materials Science, 1-1 Namiki, Tsukuba 305-0044, Japan, National Institute for Material Science, International Center for Materials Nanoarchitectonics, NIMS, Japan, International Center for Materials Nanoarchitectonics, Tsukuba, National Institue for Materials Science, Kyoto University, National Institute of Materials Science, International Center for Materials Nanoarchitectonics and National Institute for Materials Science

  • Kenji Watanabe

    National Institute for Materials Science, NIMS, Research Center for Electronic and Optical Materials, National Institute for Materials Science, Research Center for Functional Materials, National Institute for Materials Science, 1-1 Namiki, Tsukuba 305-0044, Japan, National Institute for Material Science

  • Sefaattin Tongay

    FIAP, Arizona State University

  • Chuanwei Zhang

    University of Texas at Dallas, The University of Texas at Dallas

  • Yongtao Cui

    University of California, Riverside

  • Sufei Shi

    Rensselaer Polytechnic Institute