Giant Resistance Switch in Twisted Transition Metal Dichalcogenide Tunnel Junctions

Resistance switching in multilayer structures are typically based on materials possessing ferroic orders. Here we predict an extremely large resistance switching based on the relative spin-orbit splitting in twisted transition metal dichalcogenide (TMD) monolayers tunnel junctions. Because of the valence band spin splitting which depends on the valley index in the Brillouin zone, the perpendicular electronic transport through the junction depends on the relative reciprocal space overlap of the spin-dependent Fermi surfaces of both layers, which can be tuned by twisting one layer. Our quantum transport calculations reveal a switching resistance of up to 10⁵% when the relative alignment of TMDs goes from 0 degrees to 60 degrees and when the angle is kept fixed at 60 degrees and the Fermi level is varied. The effect persists even when the interface and the tunnel barrier is disordered, which, together with the large spin-splitting, suggests the effect should be observed at room temperature. Our results show how twist angle control in transition metal dichalcogenides can be used for next-generation memory and electronic devices.