Design and Characterization of High-Performance p-n Junctions in 2D Group III-V Semiconductors

In the quest for pioneering advancements in nanoelectronics and optoelectronics, the utilization of two-dimensional (2D) materials has attracted substantial attention. This study presents the design and investigation of electron transport properties in a p–n junction formed from monolayer Group III-V semiconductors, employing the non-equilibrium Green's function formalism. We ensure the structural stability of 2D systems and select Group III-V semiconductors with direct, suitably tailored band gaps. Achieving n- and p-type doping is accomplished through the substitution of Group III and V elements with C and Si, thereby introducing donor and acceptor states proximate to the conduction and valence band edges of the material. The designed systems exhibit diode-like behavior, demonstrating ideal rectification characteristics and a versatile electronic response. Our research contributes to the expanding landscape of advanced semiconductor technologies and their potential for diverse applications in the next-generation electronics.



This work was supported by the Scientific and Technological Research Council of Turkey (TUBITAK) under Project No. 121F126.