Tunable inductive coupler with >99.9% two-qubit gate fidelity between fluxonia
ORAL
Abstract
* This work was supported by the Army Research Office under Grant No. W911NF1910016. This work is funded in part by EPiQC, an NSF Expedition in Computing, under grant CCF1730449. This work was partially supported by the University of Chicago Materials Research Science and Engineering Center, which is funded by the National Science Foundation under award number DMR-1420709. Devices were fabricated in the Pritzker Nanofabrication Facility at the University of Chicago, which receives support from Soft and Hybrid Nanotechnology Experimental (SHyNE) Resource (NSF ECCS-1542205), a node of the National Science Foundation's National Nanotechnology Coordinated Infrastructure.
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Publication: Tunable inductive coupler for high fidelity gates between fluxonium qubits, arXiv preprint arXiv:2309.05720
Presenters
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Helin Zhang
Massachusetts Institute of Technology
Authors
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Helin Zhang
Massachusetts Institute of Technology
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Chunyang Ding
University of Chicago
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Daniel K Weiss
Yale University
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Ziwen Huang
Fermilab
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Yuwei Ma
Tsinghua University
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Charles Guinn
Princeton University
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Sara F Sussman
Princeton
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Sai Pavan Chitta
Northwestern University
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Danyang Chen
Northwestern University
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Andrew A Houck
Princeton University
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Jens Koch
Northwestern University
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David I Schuster
Stanford University, University of Chicago