Idealizing Tauc Plot for Accurate Bandgap Determination of Semiconductor with UV-Vis: A Case Study for c-BAs
ORAL
Abstract
The Tauc plot is widely used to determine the bandgap of semiconductors, but the actual plot often exhibits significant baseline absorption below the expected bandgap, leading to bandgap discrepancies from two different extrapolations. In this work, we first discuss the origin of baseline absorption, and show that both extrapolation methods can produce significant errors by simulating Tauc plots with varying levels of baseline absorption. We then propose and experimentally verify a new method that idealizes the absorption spectrum by removing its baseline before constructing the Tauc plot. Finally, we apply this new method to cubic boron arsenide (c-BAs), resolve its bandgap discrepancies and obtain a converging bandgap of 1.835 eV based on both previous and new transmission spectra. The method is applicable to both indirect and direct bandgap semiconductors with absorption spectrum measured via transmission or diffuse reflectance, will become essential to obtain accurate values of their bandgaps.
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Presenters
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Hong Zhong
University of Houston
Authors
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Hong Zhong
University of Houston
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Fengjiao Pan
University of Houston
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Shuai Yue
national center for nanoscience and technology
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Chenzhen Qin
University of Houston
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Viktor Hadjiev
University of Houston
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Fei Tian
University of Houston
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Xinfeng Liu
national center for nanoscience and technology
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Feng Lin
Yunnan University
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Zhiming Wang
University of Electronic Science and Technology of China, University of Electronic and Science Technology of China
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Zhifeng Ren
University of Houston
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Jiming Bao
University of Houston