Schrödinger-Poisson modeling of SiGe-based bilayer systems

Bilayer Si/Ge heterostructures are appealing as novel quantum computing platforms due to their potential to achieve spontaneous interlayer coherence and their inherent scalability. A Schrödinger-Poisson simulation modeling a Si/SiGe bilayer heterostructures has been realized in order to characterize charge-distribution and tunneling-induced interlayer coherence, hereby supplementing experimental results. An analysis of the effect of a magnetic field on bilayer Si/SiGe devices was performed using the Schrödinger-Poisson simulation, demonstrating that an applied magnetic field has an unmeasurable effect on the distribution of charge carriers. Additionally, the simulation was extended to model holes in Ge/SiGe bilayer devices, enabling meaningful comparison to future experimental results. Major divergences between the experimental and the simulated results would suggest that some mechanism not captured in the simulation, such as exciton condensation, occurs within the physical system.