Defects and Doping in III-Vs and their Alloys

ORAL · F05 · ID: 2154723






Presentations

  • Characterizing 3D Defect Networks in GaAs Nanowires using Coherent X-ray Diffractive Imaging

    ORAL

    Publication: "Dislocations and Stacking Faults in GaAs Characterized in 3 Dimensions using Coherent X-ray Imaging" Manuscript under preparation

    Presenters

    • Julie J Barringer

      Rensselaer Polytechnic Institute

    Authors

    • Julie J Barringer

      Rensselaer Polytechnic Institute

    • Edwin Fohtung

      Rensselaer Polytechnic Institute

    • Anders Mikkelsen

      Lund University

    View abstract →

  • Influence of Non-stoichiometry and Local Atomic Environments on Carrier Transport in GaAs<sub>1-x-y</sub>N<sub>x</sub>Bi<sub>y</sub> Alloys

    ORAL

    Publication: J.W. Mitchell, T.-Y. Huang, C.M. Greenhill, T. Jen, Y.-C. Yang, K. Hammond, B. Arnold, J.N. Heyman, and R.S. Goldman, "Influence of Nonstoichiometry and Local Atomic Environments on Carrier Transport in GaAs1-x-yNxBiy alloys", to be submitted (2023).

    Presenters

    • Jared W Mitchell

      University of Michigan

    Authors

    • Jared W Mitchell

      University of Michigan

    • James N Heyman

      Macalester College

    • Rachel S Goldman

      University of Michigan

    • Christian M Greenhill

      University of Michigan

    • Tao-Yu Huang

      University of Michigan

    • Timothy Jen

      University of Michigan, Intel Corporation

    • Kyle Hammond

      University of Michigan

    • Yu-Chen Yang

      University of Michigan

    View abstract →

  • Rare-earth impurities in III-V semiconductors and their alloys

    ORAL

    Presenters

    • Ruiqi Hu

      University of Delaware

    Authors

    • Ruiqi Hu

      University of Delaware

    • Intuon Chatratin

      University of Delaware

    • Quoc Dai Q HO

      University of Delaware

    • Quang D To

      University of Delaware

    • Garnett W Bryant

      National Institute of Standards and Technology

    • Anderson Janotti

      University of Delaware

    View abstract →

  • Onset of tetrahedral interstitial formation in GaAsN alloys

    ORAL

    Publication: Onset of tetrahedral interstitial formation in GaAsN alloys (In preparation)

    Presenters

    • Joshua Cooper

      University of Michigan

    Authors

    • Joshua Cooper

      University of Michigan

    • Timothy Jen

      University of Michigan, Intel Corporation

    • Drew Novak

      University of Michigan

    • Fabian Naab

      University of Michigan

    • Yongqiang Wang

      Los Alamos National Laboratory

    • Rachel S Goldman

      University of Michigan

    View abstract →

  • Lateral strain in InGaAsSb epitaxial layers grown by LPE: Effect on structural and optical properties

    ORAL

    Presenters

    • Julio G G Mendoza-Alvarez

      Physics Dept-Cinvestav-IPN

    Authors

    • Julio G G Mendoza-Alvarez

      Physics Dept-Cinvestav-IPN

    • Gerardo Villa-Martinez

      SEPI-ESIME Ticoman

    • Miguel Angel Gonzalez-Morales

      UPIITA-IPN

    • Jose de Jesus Cruz-Bueno

      CONAHCYT-UPIITA-IPN

    • Mariano Ramirez-Lopez

      UPIITA-IPN

    • Marlene Camacho-Reynoso

      PNyN-Cinvestav-IPN

    • Patricia Rodriguez-Fragoso

      Depto de Fisica-Cinvestav-IPN

    • Yenny Casallas-Moreno

      CONAHCYT-UPIITA-IPN

    • Jose Luis Herrera-Perez

      UPIITA-IPN

    View abstract →

  • Defects in as-processed, irradiated, and stressed GaAs-based device structures

    ORAL

    Presenters

    • Andrew O'Hara

      Western Michigan University, Department of Physics, Western Michigan University

    Authors

    • Andrew O'Hara

      Western Michigan University, Department of Physics, Western Michigan University

    • Xuyi Luo

      Department of Electrical and Computer Engineering, Vanderbilt University

    • Enxia Zhang

      Department of Electrical and Computer Engineering, University of Central Florida

    • Ronald D Schrimpf

      Vanderbilt University, Department of Electrical and Computer Engineering, Vanderbilt University

    • Daniel M Fleetwood

      Vanderbilt University, Department of Electrical and Computer Engineering, Vanderbilt University

    • Sokrates T Pantelides

      Department of Physics and Astronomy, Vanderbilt University

    View abstract →

  • Atomic scale analysis of N dopants in InAs using DFT and X-STM

    ORAL

    Presenters

    • Tom Verstijnen

      Eindhoven University of Technology

    Authors

    • Tom Verstijnen

      Eindhoven University of Technology

    • Douwe Tjeertjes

      Eindhoven University of Technology

    • Paul M Koenraad

      Eindhoven University of Technology

    • Edoardo G Banfi

      Eindhoven Technical University

    • Quandong Zhuang

      Lancaster University

    View abstract →

  • Tuning van der Waals heterostructures and moiré materials with near-field electrostatics

    ORAL

    Publication: Qunfei Zhou, Michele Kotiuga, and Pierre Darancet. "Analytical Theory of Near-Field Electrostatic Effects in Two-Dimensional Materials and van der Waals Heterojunctions." arXiv preprint arXiv:2205.04606 (2022).
    Qunfei Zhou, et al. "Engineering the Electronic Structure of Two-Dimensional Materials with Near-Field Electrostatic Effects of Self-Assembled Organic Layers." arXiv preprint arXiv:2109.09990 (2021).

    Presenters

    • Qunfei Zhou

      University of Kansas

    Authors

    • Qunfei Zhou

      University of Kansas

    • Michele Kotiuga

      Ecole Polytechnique Federale de Lausanne

    • Pierre Darancet

      Argonne National Laboratory

    View abstract →

  • The mystery of the "invisible" Ga vacancy in GaAs

    ORAL

    Presenters

    • Leopoldo Diaz

      Sandia National Laboratories

    Authors

    • Leopoldo Diaz

      Sandia National Laboratories

    • Harold P Hjalmarson

      Sandia National Laboratories

    • Jesse J Lutz

      Sandia National Laboratories

    • Peter A Schultz

      Sandia National Laboratories

    View abstract →

  • Trap-assisted Non-radiative Recombination of C<sub>N</sub> in GaN

    ORAL

    Publication: [1] F. Zhao et al., Phys. Rev. Lett. 131, 056402 (2023).

    Presenters

    • Hongyi Guan

      University of California, Santa Barbara

    Authors

    • Hongyi Guan

      University of California, Santa Barbara

    • Fangzhou Zhao

      University of California, Santa Barbara

    • Mark E Turiansky

      University of California, Santa Barbara

    • Chris G Van de Walle

      University of California, Santa Barbara

    View abstract →