Quantum emitters in strain-induced defects in Monolayer WSe2: Fabrication and Characterization of Dimple Dot Devices

Strain-induced defects in monolayer WSe2 give rise to localized exciton funnels, offering a promising avenue for the development of single photon quantum emitters. In this presentation, we describe the experimental realization of quantum emitters in monolayer WSe2 by fabricating quantum devices with mechanically induced strain defects. These innovative devices employ a modified 'dimple dot' geometry, in which nano indentation creates a strain profile capable of funneling excitons. We will discuss device fabrication and characterization of these devices by room temperature and cryogenic optical spectroscopy. Dimple dots in WSe2 could be a promising platform for deterministic placement of quantum emitters for integrated quantum photonics applications. Acknowledgment: We gratefully acknowledge the support from NSF award number DMR-1906383 and AFOSR award number FA9550-20-1-0207.