Imaging twisted MoTe2 with scanning tunneling microscopy: Part 1

ORAL

Abstract

Twisted bilayer molybdenum ditelluride (tMoTe2) has recently been found to host a variety of strongly correlated and topological states of matter, most notably the fractional quantum anomalous Hall effect arising at partial fillings of the moiré flat band. These states have been characterized using a combination of optical spectroscopy and electrical transport measurements, which necessitate averaging over micrometer-scale regions of samples. Critically, the microscopic mechanisms underlying these novel phases have yet to be directly explored. Although scanning tunneling microscopy and spectroscopy (STM/S) can serve as powerful tools for atomic-scale studies of tMoTe2, fabricating STM/S-compatible samples presents substantial challenges owing to the high environmental sensitivity of MoTe2 and difficulties in establishing ohmic contacts at cryogenic temperatures. Here, we summarize our efforts towards creating ultra-clean and gate-tunable tMoTe2 samples for STM/S characterization. To prevent degradation of the exfoliated MoTe2 crystals, we fabricate our samples in an argon-filled glove box and use a custom-built transfer suitcase to move the samples directly into the high-vacuum load lock of the STM. Using this technique, we study generations of device designs which steadily iterate towards functional electrical contacts at cryogenic temperatures. We will overview the quality of devices in each generation, leading into a discussion of the details of the atomic-scale electronic properties of tMoTe2 in the second part of this presentation.

Presenters

  • Keng Tou Chu

    University of Washington

Authors

  • Keng Tou Chu

    University of Washington

  • Ellis Thompson

    University of Washington

  • Florie Mesple

    University of Washington

  • Chaowei Hu

    University of Washington, Seattle, University of Washington

  • Heonjoon Park

    University of Washington

  • Jiaqi Cai

    University of Washington

  • Takashi Taniguchi

    Kyoto Univ, National Institute for Materials Science, Research Center for Materials Nanoarchitectonics, Research Center for Materials Nanoarchitectonics, National Institute for Materials Science, National Institute for Materials Sciences, NIMS, International Center for Materials Nanoarchitectonics, National Institute for Materials Science, 1-1 Namiki, Tsukuba 305-0044, Japan, National Institute for Material Science, International Center for Materials Nanoarchitectonics, NIMS, Japan, International Center for Materials Nanoarchitectonics, Tsukuba, National Institue for Materials Science, Kyoto University, National Institute of Materials Science, International Center for Materials Nanoarchitectonics and National Institute for Materials Science

  • Kenji Watanabe

    National Institute for Materials Science, NIMS, Research Center for Electronic and Optical Materials, National Institute for Materials Science, Research Center for Functional Materials, National Institute for Materials Science, 1-1 Namiki, Tsukuba 305-0044, Japan, National Institute for Material Science

  • Jiun-Haw Chu

    University of Washington, Department of Physics, University of Washington, Seattle, WA 98105

  • Xiaodong Xu

    University of Washington

  • Matthew Yankowitz

    University of Washington