Magnetic imaging of integer and fractional Chern insulators in tMoTe2
ORAL
Abstract
Fractional Chern insulators[1-7] are topologically ordered electronic ground states that may occur at partial filling of a lattice band when time reversal symmetry is broken. Crucially, because they occur in lattice bands rather than Landau levels in case of Fractional Quantum Hall Effect, the energy scale of the Coulomb interaction is set by the lattice spacing rather than the magnetic length, potentially enabling higher energy scales. Here, we use nanoSQUID microscopy to measure the local magnetization of tMoTe2 as a function of the gate-tuned density and electronic displacement field. We see signatures of robust gapped states with large edge state orbital magnetization at fillings -1 and -⅔, consistent with integer and fractional Chern insulators at these fillings. Samples show a high degree of disorder on the sub-micron scale, likely associated with misalignment of the rotationally faulted layers. We use our local probe to measure the thermodynamic energy locally, revealing significantly larger gap sizes compared to those obtained through optical and transport experiments which average over larger spatial areas.
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Publication:
Presenters
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Evgeny Redekop
University of California, Santa Barbara
Authors
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Evgeny Redekop
University of California, Santa Barbara
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Canxun Zhang
University of California, Berkeley
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Heonjoon Park
University of Washington
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Jiaqi Cai
University of Washington
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Eric Anderson
University of Washington at Seattle, University of Washington
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Owen I Sheekey
University of California, Santa Barbara, University of California Santa Barbara, University of Santa Barbara, UCSB
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Trevor B Arp
University of California, Santa Barbara
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Ruoxi Zhang
Pennsylvania State University
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Grigory Babikyan
University of California, Santa Barbara
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Samuel Salters
University of California, Santa Barbara
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Xiaodong Xu
University of Washington
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Andrea F Young
University of California, Santa Barbara