Integration of Electronically Reconfigurable Complex Oxide Membranes with Si

Recent reports of electronically reconfigurable complex oxide heterointerfaces show the feasibility of its integration with other materials in the form of free-standing membranes [1]. A novel method for creating reconfigurable silicon nanodevices capable of storing and gating single electrons and their spins is proposed. The approach takes advantage of a reprogrammable LaAlO3/SrTiO3 (LAO/STO) heterostructure which can be fabricated as a free-standing membrane and can be switched between a conductive and insulating phase using ultra-low voltage electron-beam lithography (ULV-EBL) [1][2]. The ULV-EBL technique enables patterning of buried layers, and therefore enables functional integration of LAO/STO with silicon. Here we describe efforts to create Si-based field effect transistor devices gated by an overlying LAO/STO membrane. The principal advantage of this technique is the potential for high-resolution gate patterning of silicon quantum devices and in turn a potential to advance silicon quantum computing.

[1] Eom, K. et al. Science advances 7, 33 (2021)

[2] Yang, D. et al., Appl. Phys. Lett. 117, 253103 (2020)