Anisotropy in GaAs/AlGaAs Heterostructures and its Effect on Interferometer Performance

ORAL

Abstract

Intrinsic and extrinsic anisotropies are present in high mobility GaAs/AlGaAs heterostructures used to study the Fractional Quantum Hall Effect (FQHE). These anisotropies effect magnetotransport behavior along orthogonal crystal axes. These transport differences have an effect on the performance of devices created with these heterostructures. We show how the anisotropy presents in bulk heterostructure samples and how the bulk transport correlates with interferometer device performance.

* Princeton work funded by the Gordon and Betty Moore Foundation through EPiQS initiative grant No. GBMF4420 and GBMF9615. We acknowledge the Aspen Center for Physics, NSF PHY-1607611 and KITP, NSF PHY-1748958

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Presenters

  • Ian Crawley

    Nokia Bell Labs

Authors

  • Ian Crawley

    Nokia Bell Labs

  • Robert L Willett

    Nokia Bell Labs

  • Hasan Siddiquee

    Washington University in St. Louis

  • Paloma Machain

    Nokia Bell Labs

  • Loren N Pfeiffer

    Princeton University

  • Adbhut Gupta

    Princeton University

  • Kirk Baldwin

    Princeton University