Exciton Stark shift induced by a twisted hBN substrate

ORAL

Abstract

Twisted hexagonal boron nitride (t-hBN) layers have been demonstrated to exhibit ferroelectric domains. When a functional layer is placed on the top surface of the t-hBN substrate, the electrostatic potential from the interface of t-hBN can modulate an adjacent layer. Here, we report the observation of exciton Stark shift in a MoSe2 monolayer placed on top of the t-hBN substrate due to polarization field from charge redistribution at the interface of t-hBN. We correlate Kelvin probe force microscopy (KPFM) measurements with optical spectroscopic measurements. These findings suggest a new way to modulate atomically thin semiconductors and can significantly expand universal moiré superlattices in engineering material properties.

* We gratefully acknowledge funding from the Air Force Office of Scientific Research under award FA2386-21-1-4067, National Science Foundation via grants MRSEC DMR-2308817, DMR-2122041, DMR-2044920, DMR-2117438, DMR-1720595, Welch Foundation under grant F-1662, JSPS KAKENHI under grants 19H05790, 20H00354, 21H05233, RGC of HKSAR under grant HKU SRFS2122-7S05 and Croucher Foundation.

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Presenters

  • Dong Seob Kim

    The University of Texas at Austin, University of Texas at Austin

Authors

  • Dong Seob Kim

    The University of Texas at Austin, University of Texas at Austin

  • Chengxin Xiao

    The University of Hong Kong

  • Roy C Dominguez

    Texas State University

  • Kyungpyo Lee

    University of Texas at Austin

  • Rigo Mayorga-Luna

    Texas State University

  • Hyunsue Kim

    University of Texas at Austin

  • Zhida Liu

    University of Texas at austin, University of Texas at Austin

  • Kenji Watanabe

    National Institute for Materials Science, NIMS, Research Center for Electronic and Optical Materials, National Institute for Materials Science, Research Center for Functional Materials, National Institute for Materials Science, 1-1 Namiki, Tsukuba 305-0044, Japan, National Institute for Material Science

  • Takashi Taniguchi

    Kyoto Univ, National Institute for Materials Science, Research Center for Materials Nanoarchitectonics, Research Center for Materials Nanoarchitectonics, National Institute for Materials Science, National Institute for Materials Sciences, NIMS, International Center for Materials Nanoarchitectonics, National Institute for Materials Science, 1-1 Namiki, Tsukuba 305-0044, Japan, National Institute for Material Science, International Center for Materials Nanoarchitectonics, NIMS, Japan, International Center for Materials Nanoarchitectonics, Tsukuba, National Institue for Materials Science, Kyoto University, National Institute of Materials Science, International Center for Materials Nanoarchitectonics and National Institute for Materials Science

  • Chih-Kang Shih

    University of Texas at Austin

  • Yoichi Miyahara

    Texas State University

  • Wang Yao

    The University of Hong Kong

  • Xiaoqin Elaine Li

    University of Texas at Austin, The University of Texas at Austin