Flat-band engineering using III-V semiconductor heterostructures

III-V semiconductor heterostructures are known to have the flexibility for band engineering. In this work, we employ the k·p method to investigate the band structure of InAs/GaSb quad-layer quantum wells and explore the possibility of creating flat-bands at the Γ point. Specifically, we find an approach to locate a class of flat conduction bands within the material's parameter space. To validate our findings, we compare our calculations with magneto-transport and -infrared measurements on a selected sample. A remarkable agreement is achieved.