Characterization of disorder in InAs quantum well with metal-insulator transition

The study of disorder and its effect on metallic behavior of the resistivity observed in two-dimensional electron systems is a topic of great interest due to its relevance in understanding fundamental quantum phenomena and its potential for improvement of quantum devices. In this research, we investigate the metal-insulator transition phenomena in InAs 2D electron systems. Based on the transition we investigate the underlying physics by comparison of conductivity and transport mobility vs density plots. Our experimental approach describes a detailed fabrication process and low temperature characterizations of Hall bar samples.