Phonon-Mediated Superconductivity near the Lattice Instability in Hole-Doped Hydrogenated Monolayer Hexagonal Boron Nitride

POSTER

Abstract

Employing the density-functional theory with local density approximation, we show that the fully hydrogenated monolayer-hexagonal boron nitride H2BN has a direct-band gap of 2.96 eV in the blue-light region while the pristine h-BN has a wider indirect-band gap of 4.78 eV. The hole-doped H2BN is stable at low carrier density (n) but becomes dynamically unstable at higher n. We predict that it is a phonon-mediated superconductor with a transition temperature (Tc) which can reach ~31 K at n of 1.5x1014 holes cm-2 near the lattice instability. The Tc could be enhanced up to ~82 K by applying a biaxial tensile strain at 6% along with doping at n of 3.4x1014 holes cm-2 close to a new lattice instability.

* This work was supported by the Texas Center for Superconductivity at University of Houston, the Robert A. Welch Foundation (Grant No. E-1146), the National Natural Science Foundation of China (Grant No. 12074213), and the Major Basic Program of Natural Science Foundation of Shandong Province (Grant No. ZR2021ZD01).

Presenters

  • Takat B Rawal

    Texas Center for Superconductivity and Department of Physics, University of Houston, Quantum Generative Materials (GenMat)

Authors

  • Takat B Rawal

    Texas Center for Superconductivity and Department of Physics, University of Houston, Quantum Generative Materials (GenMat)

  • Ling-Hua Chang

    Texas Center for Superconductivity and Department of Physics, University of Houston

  • Hao-Dong Liu

    School of Physics and Physical Engineering, Qufu Normal University

  • Hong-Yan Lu

    School of Physics and Physical Engineering, Qufu Normal University

  • C.S. Ting

    Texas Center for Superconductivity and Department of Physics, University of Houston