Quantum Hall effect systems of electrons with an internal source of anisotropy

Two-dimensional system of electrons can now be easily created in semiconductor heterojunctions at the interface between the two materials. Application of a strong perpendicular magnetic under specific quantum conditions leads to the creation of a novel electronic state of matter known as the quantum Hall state of the electrons. The most robust of such states representing the integer and/or fractional quantum Hall phases show the expected characteristic magnetoresistance for such systems. However, signs of anisotropic patterns and features in magneto-transport properties have been observed for a few other peculiar cases. The origin of such anisotropic patterns may have various mechanisms. It may also be due the specific internal details of the system and material such as the isotropic or anisotropic nature of the effective mass of electrons, the nature of the host substrate parameters, the nature of the interaction potentials, as well as other subtler effects. The interplay between all these factors can lead to many outcomes. In this work we consider small quantum Hall states of electrons at an even-denominator filling factor of the lowest Landau level and study the appearance of anisotropic patterns as a result of an internal anisotropy in the interaction potential.