Trap-assisted Auger-Meitner recombination from first principles

Trap-assisted nonradiative recombination is a key mechanism limiting the efficiency of optoelectronic devices such as light-emitting diodes. We have developed a general first-principles methodology to calculate the trap-assisted Auger-Meitner (TAAM) rate in semiconductors and shown the crucial role of TAAM in trap-assisted nonradiative recombination in wide-band-gap semiconductors [1], in which the conventional multiphonon emission mechanism cannot explain the measured loss. Building on our developed formalism for TAAM process with one bound state, we extend our formalism to describe TAAM processes involving two bound states. Such a process can potentially impact the efficiency of nitride light emitters, or the charge-state dynamics of quantum defects such as nitrogen-vacancy centers in diamond.