Role of magnetic ions in the thermal Hall effect of the paramagnetic insulator TmVO4
ORAL
Abstract
In a growing number of materials, phonons have been found to generate a thermal Hall effect, but the underlying mechanism remains unclear. Inspired by previous studies that revealed the importance of Tb3+ ions in generating the thermal Hall effect of Tb2Ti2O7, we investigated the role of Tm3+ ions in TmVO4, a paramagnetic insulator with a different crystal structure. We observe a negative thermal Hall conductivity in TmVO4 with a magnitude such that the Hall angle, |Kxy / Kxx|, is approximately 1 x 10-3 at H = 15 T and T = 20 K, typical for a phonon-generated thermal Hall effect. In contrast to the negligible Kxy found in Y2Ti2O7, we observe a negative Kxy in YVO4 with a Hall angle of magnitude comparable to that of TmVO4. This shows that the Tm3+ ions are not essential for the thermal Hall effect in this family of materials. Interestingly, at an intermediate Y concentration of 30 % in Tm1-xYxVO4,
Kxy was found to have a positive sign, pointing to the possible importance of impurities in the thermal Hall effect of phonons.
Kxy was found to have a positive sign, pointing to the possible importance of impurities in the thermal Hall effect of phonons.
–
Presenters
-
Ashvini Vallipuram
Université de Sherbrooke
Authors
-
Ashvini Vallipuram
Université de Sherbrooke
-
Lu Chen
Université de Sherbrooke
-
Emma Campillo
Université de Sherbrooke
-
manel mezidi
Université Paris Cité
-
Gaël Grissonnanche
Cornell University, École Polytechnique
-
Mark P Zic
Stanford University
-
Yuntian Li
Stanford University
-
Ian R Fisher
Stanford Univ, Stanford University
-
Jordan Baglo
Université de Sherbrooke
-
Louis Taillefer
Universite de Sherbrooke