Mapping flat bands and correlated states in twisted trilayer graphene

ORAL

Abstract

The twist angle between two van der Waals layers is a powerful tuning knob to engineer electronic band structure. In the limit of small interlayer twist, hybridization between layers can produce flat electronic bands, whereas a large twist angle leads to more decoupled layers. In this talk, I will discuss measurements of twisted trilayer graphene which realizes both flat and dispersive bands. We conduct electronic compressibility measurements with a scanning single electron transistor (SET) microscope to locally map how the band structure evolves as the inter-layer twist angles vary in space. We discover a range of “magic” angles for which electronic interaction effects are prominent for electrons and holes, respectively, leading to correlated phases at both low and high magnetic fields. I will discuss how these results clarify the role of interlayer twist in stabilizing distinct ground states in twisted graphene multilayer systems.

* This work was supported by the QSQM, an Energy Frontier Research Center funded by the U.S. Department of Energy (DOE), Office of Science, Basic Energy Sciences (BES). Z.Z. is supported by a Stanford Science Fellowship.

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Presenters

  • Jesse Hoke

    Stanford University

Authors

  • Jesse Hoke

    Stanford University

  • Ziyan Zhu

    Stanford University

  • Nicole S Ticea

    Stanford University

  • Yifan Li

    Stanford University

  • Julian May-Mann

    University of Illinois at Urbana-Champai, Stanford

  • Kenji Watanabe

    National Institute for Materials Science, NIMS, Research Center for Electronic and Optical Materials, National Institute for Materials Science, Research Center for Functional Materials, National Institute for Materials Science, 1-1 Namiki, Tsukuba 305-0044, Japan, National Institute for Material Science

  • Takashi Taniguchi

    Kyoto Univ, National Institute for Materials Science, Research Center for Materials Nanoarchitectonics, Research Center for Materials Nanoarchitectonics, National Institute for Materials Science, National Institute for Materials Sciences, NIMS, International Center for Materials Nanoarchitectonics, National Institute for Materials Science, 1-1 Namiki, Tsukuba 305-0044, Japan, National Institute for Material Science, International Center for Materials Nanoarchitectonics, NIMS, Japan, International Center for Materials Nanoarchitectonics, Tsukuba, National Institue for Materials Science, Kyoto University, National Institute of Materials Science, International Center for Materials Nanoarchitectonics and National Institute for Materials Science

  • Trithep Devakul

    Stanford University

  • Thomas P Devereaux

    Stanford University

  • Ben Feldman

    Stanford University