Twist-decoupled van der Waals layers as a probe for correlated quantum phases

ORAL

Abstract

Determining the symmetry breaking order of correlated quantum phases is essential for understanding the microscopic interactions in their host systems. In this talk, I will discuss a new technique based on twist-decoupled van der Waals layers that enables measurements of their electronic band structure and, by studying the backscattering between counter-propagating edge states in transport, determination of the relative spin polarization of their edge modes. We apply this method to twist-decoupled magic-angle twisted bilayer graphene (MATBG) and monolayer graphene, where we find that the broken-symmetry quantum Hall states that extend from the charge neutrality point in MATBG are spin-unpolarized at even integer filling factors. The measurements also indicate that the correlated Chern insulator emerging from half filling of the flat valence band is spin-unpolarized, but suggest that its conduction band counterpart may be spin-polarized. Our results constrain models of spin-valley ordering in MATBG and establish a versatile approach to study the electronic properties of van der Waals systems.

* *This work was supported by the QSQM, an Energy Frontier Research Center funded by the U.S. Department of Energy (DOE), Office of Science, Basic Energy Sciences (BES)

Publication: arXiv:2309.06583

Presenters

  • Yifan Li

    Stanford University

Authors

  • Yifan Li

    Stanford University

  • Jesse Hoke

    Stanford University

  • Julian May-Mann

    University of Illinois at Urbana-Champai, Stanford

  • Kenji Watanabe

    National Institute for Materials Science, NIMS, Research Center for Electronic and Optical Materials, National Institute for Materials Science, Research Center for Functional Materials, National Institute for Materials Science, 1-1 Namiki, Tsukuba 305-0044, Japan, National Institute for Material Science

  • Takashi Taniguchi

    Kyoto Univ, National Institute for Materials Science, Research Center for Materials Nanoarchitectonics, Research Center for Materials Nanoarchitectonics, National Institute for Materials Science, National Institute for Materials Sciences, NIMS, International Center for Materials Nanoarchitectonics, National Institute for Materials Science, 1-1 Namiki, Tsukuba 305-0044, Japan, National Institute for Material Science, International Center for Materials Nanoarchitectonics, NIMS, Japan, International Center for Materials Nanoarchitectonics, Tsukuba, National Institue for Materials Science, Kyoto University, National Institute of Materials Science, International Center for Materials Nanoarchitectonics and National Institute for Materials Science

  • Barry Bradlyn

    University of Illinois at Urbana-Champai, University of Illinois at Urbana-Champaign, University of Illinois at Urbana-Champain

  • Taylor Hughes

    University of Illinois at Urbana-Champaign

  • Ben Feldman

    Stanford University