2D-transition metal dichalcogenides for energy efficient thermoelectrics

ORAL

Abstract

To develop the sustainable and energy-efficient technologies, the MoS2, has garnered attention as a promising thermoelectric material due to its exceptional transport properties [1-2]. This work aims to develop a compact and highly efficient thermoelectric platform at the nanoscale by employing such inexpensive 2D material, while also advancing the understanding of the underlying physics. We solve the semi-classical Boltzmann transport equation within the constant relaxation time approximation under the purview of first-principles density functional theory to investigate the unique features of the bulk 2H and monolayer MoS2 material system. Particular emphasis is dedicated to the computations of thermoelectric and energy transport parameters. Our thorough investigation shows that for the p-type of carriers, the bulk 2H and monolayer MoS2 exhibit high Seebeck coefficients of 1514 and 1550 μV/K at 500 K, respectively. Moreover, at 700 K, the bulk 2H and monolayer MoS2 reveal ultrahigh power factor values of 8.48 × 1011 and 3.21 × 1011 Wm−1K−2s−1 for n-type carriers, respectively. The investigation shows that the bulk MoS2 has major promise as a thermoelectric material for advanced energy device applications.



References:

[1] G. J. Snyder and E. S. Toberer, Nat. Mater. 7, 105 (2008).

[2] M. Kayyalha, J. Maassen, M. Lundstrom, L. Shi, and Y. P. Chen, J. Appl. Phys. 120 (2016).

* **The authors acknowledge the funding from the Science and Engineering Research Board (SERB), Government of India.

Presenters

  • Rohit Kumar

    Department of Electrical Engineering, Indian Institute of Technology Bombay, Powai, Mumbai-400076

Authors

  • Bhaskaran Muralidharan

    Indian Institute of Technology Bombay, Department of Electrical Engineering, Indian Institute of Technology Bombay, Powai, Mumbai-400076

  • Rohit Kumar

    Department of Electrical Engineering, Indian Institute of Technology Bombay, Powai, Mumbai-400076