Entropy Production During Filament Formation in ECM Memristors.

Electrochemical metallization (ECM) memristors have great potential in future neuromorphic computing hardware. The set, reset, and variable resistance features of these devices originates in the formation and breakup of metal filaments in a solid state electrolyte. The current research primarily focuses on the resulting current-voltage characteristics of the device. The principle that determines the morphology of these filaments is not well established. It has been proposed that the entropy production of a non-equilibrium system approaches a minimum at the stationary state. Here we examine the validity of this principle during filament formation in ECM memristors using kinetic Monte Carlo simulations.