In-plane Broken Symmetry with Strong Perpendicular Magnetization in Ru-substituted Manganite Films
ORAL
Abstract
Understanding the origin of magnetic anisotropy provides insights into the interplay of various factors, including crystal symmetry, spin-orbit coupling, and exchange interactions, thereby playing a crucial role in designing the required magnetic materials for various applications. Recent studies on the Ru substituted La0.70Sr0.30MnO3 (Ru-LSMO) films have illustrated non-trivial magnetic topologies, and enhanced anomalous Hall effect, where tilted magnetic anisotropy (TMA) plays a crucial role. While perpendicular magnetization has been demonstrated with Ru-LSMO, anisotropic in-plane magnetization was not addressed. Here we describe anisotropic in-plane magnetization coexisting with strong perpendicular magnetization in 10% Ru substituted LSMO films with Curie temperature near room temperature. In our recent work, we unveil a monoclinic, fully-strained phase, and 1D periodic in-plane structural domains. We determine that the in-plane symmetry breaking by the monoclinic crystal structure induces weekly anisotropic in-plane magnetization, which is further enhanced by the 1D periodic structural modulation. We further illustrate how the interplay of in-plane crystal symmetry breaking, octahedral rotation, spin-orbit coupling, and the magnetic interaction between Ru and Mn ions induce such a complex TMA. Such TMA is attractive for cutting edge spintronic memories such as spin-orbit-torque based deterministic perpendicular magnetization switching.
* This work was funded by the German Israeli Foundation (GIF Grant no. I-1510-303.10/2019).
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Publication: B. Das, L. Wysocki, J. Schöpf, L. Yang, A. Capua, P. H. M. van Loosdrecht, and L. Kornblum, Tilted Magnetic Anisotropy with In-Plane Broken Symmetry in Ru-Substituted Manganite Films, Adv. Electron. Mater. 9, 2300253 (2023); https://doi.org/10.1002/aelm.202300253
Presenters
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Brajagopal Das
Technion Israel Institute of Technology
Authors
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Brajagopal Das
Technion Israel Institute of Technology
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Lena Wysocki
University of Cologne
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Jörg Schöpf
University of Cologne
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Lin Yang
University of Cologne
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Amir Capua
The Hebrew University of Jerusalem
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Paul H.M. van Loosdrecht
University of Cologne
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Lior Kornblum
Technion Israel Institute of Technology