Gate-defined accumulation-mode quantum dots in monolayer and bilayer WSe₂

This talk discusses the fabrication and measurement of single and double quantum dot devices based on monolayer and bilayer WSe₂ with a target application of spin-valley qubits. For single dot devices, an intrinsic readout method in bilayer WSe₂ for spin-valley lifetime measurement will be described along with devices designed to implement it. For double dot devices, I will describe local gate control of monolayer WSe₂ to create single-electron/single-hole p-n junctions for on-demand single photon emission.