Towards mechanically mediated interference between tin vacancy centers in diamond

Solid-state quantum emitters in diamond are a leading platform for quantum information and networking interfacing flying photons with long-lived memories. However, a major challenge in quantum networks based on solid-state quantum emitters is the THz-scale inhomogeneous spectral distribution that prevents optical interference between separate emitters. In this work, we overcome this limitation by capacitive strain tuning of tin vacancy (SnV-) centers in a photonic integrated platform allowing for many GHz-scale tuning of color centers in different photonic channels. We outline the process of pre-characterizing quantum microchiplets (QMCs) with implanted SnV- centers to identify nearly identical emitters over the inhomogeneous distribution. We follow this with hybrid integration of QMCs into a photonic interposer and high-voltage DC strain tuning of QMCs to tune emitters in independent photonic channels to identical frequencies. Finally, we discuss the prospects of implementing this platform in interfering identical-frequency color centers in a quantum network.