Commercial HEMT amplifiers for cryogenic readout of quantum dot devices.

High Electron Mobility Transistors (HEMTs) are often used to measure quantum dot devices at cryogenic temperatures[1] owing to their low noise, low power dissipation, and compatibility with cryogenic temperatures. This study investigates the power dissipation, gain, and noise performance of single-stage low noise amplifiers designed with off the shelf parts at room temperature, 77K (liquid nitrogen), and 1K (dilution fridge still temperature). In this talk we report the performance of various transistors at cryogenic temperatures to better inform cryogenic amplifier design.



[1] Vink et al., Appl. Phys. Lett. 91, 123512 (2007)