Probing the single-particle valley relaxation time in bilayer graphene quantum dots

ORAL

Abstract

Graphene and bilayer graphene (BLG) have emerged as interesting and promising host materials for qubits. Thanks to its tunable band gap, bilayer graphene allows for electrostatic confinement of charge carriers in quantum dots (QDs), similar as done in conventional III-V semiconductors. Additional to the spin degree of freedom, BLG exhibits a valley pseudospin, which distinguishes between its two energetically degenerate but inequivalent band structure minima (valleys) K and K'. The finite Berry curvature at these high symmetry points gives rise to a valley-dependent magnetic moment allowing for manipulation and control of the valley degree of freedom. Complementary to spintronics, the control over the valley enables valleytronics, where the valley degree of freedom is used as platform for quantum information processing. To assess the potential of valley qubits in BLG, it is necessary to investigate the relaxation time T1 of an excited valley state, as it limits the lifetime of the encoded quantum information.

Here, we report single-particle valley relaxation times of up to 7 μs in a BLG quantum dot, sufficiently long to utilize a valley state for coherent manipulation. The observed dependency of T1 on the perpendicular magnetic field can be described qualitatively and quantitatively by a model considering T1 to be limited by electron-phonon coupling. We identify coupling to acoustic phonons via bond length change and via the deformation potential as the limiting mechanisms.

* This project has received funding from the European Union's Horizon 2020 research and innovation programme under grant agreement No. 881603 (Graphene Flagship) and from the European Research Council (ERC) under grant agreement No. 820254, the Deutsche Forschungsgemeinschaft (DFG, German Research Foundation) under Germany's Excellence Strategy - Cluster of Excellence Matter and Light for Quantum Computing (ML4Q) EXC 2004/1 - 390534769, through DFG (STA 1146/11-1), and by the Helmholtz Nano Facility.

Presenters

  • Katrin Hecker

    RWTH Aachen University

Authors

  • Katrin Hecker

    RWTH Aachen University

  • Luca Banszerus

    Center for Quantum Devices, University of Copenhagen

  • Lin Wang

    University of Konstanz

  • Samuel Möller

    RWTH Aachen University

  • Kenji Watanabe

    National Institute for Materials Science, NIMS, Research Center for Electronic and Optical Materials, National Institute for Materials Science, Research Center for Functional Materials, National Institute for Materials Science, 1-1 Namiki, Tsukuba 305-0044, Japan, National Institute for Material Science

  • Takashi Taniguchi

    Kyoto Univ, National Institute for Materials Science, Research Center for Materials Nanoarchitectonics, Research Center for Materials Nanoarchitectonics, National Institute for Materials Science, National Institute for Materials Sciences, NIMS, International Center for Materials Nanoarchitectonics, National Institute for Materials Science, 1-1 Namiki, Tsukuba 305-0044, Japan, National Institute for Material Science, International Center for Materials Nanoarchitectonics, NIMS, Japan, International Center for Materials Nanoarchitectonics, Tsukuba, National Institue for Materials Science, Kyoto University, National Institute of Materials Science, International Center for Materials Nanoarchitectonics and National Institute for Materials Science

  • Guido Burkard

    University of Konstanz

  • Christian Volk

    RWTH Aachen University

  • Christoph Stampfer

    2nd Institute of Physics A, RWTH Aachen University, RWTH Aachen University, RWTH Aachen