Hybrid devices with Sn on InAs nanowires: Superconducting Properties and Application in Parametric Amplification

Sn has emerged as an attractive choice of superconductor for use in super-semiconductor hybrid nanowire devices. With InAs as the nanowire material, we report Sn to induce robust superconducting properties such as hard and substantial superconducting gap as well as large gate tuneable switching currents surviving in high magnetic fields. These properties pave the way for the development of magnetic field resilient and gate-tuneable quantum devices with Sn replacing the traditionally used Al-based nanowires. Furthermore, we implement duffing oscillators to delve into the non-linear characteristics of the Sn shell, revealing signatures of four-wave mixing underscoring their potential to advance low-noise parametric amplification techniques.