Energy Spectrum of the one and two electrons in a Quantum Dot

The energy levels of the electrons in a quantum dot depends on confinement energy and the Coulomb energy between the electron. Here we study the dynamics of one and two electrons in the GaAs and Si quantum dot using an effective mass approach. In silicon nanostructure the presence of low lying degenerate energy levels and how they are mixed with the interface plays a critical role in calculating the interaction and electron spectrum. We investigate the effect of the interface roughness on the valley orbit coupling of different orbitals and thus the energy levels for different sizes of the quantum dots. Our results shed new lights on the controllability and detectibility of silicon based qubit and it's application in quantum information processing.