Stoichiometric control of 2D superconductivity and mobility at SrTiO3-based interfaces

ORAL

Abstract

SrTiO3-based quasi-two-dimensional electron gases (q-2DEGs), that exhibit coexistence of gate tunable multi-orbital 2D superconductivity and strong Rashba spin-orbit coupling (RSOC), have ingredients to generate topological superconducting electronics for quantum application. However, a comparison between the electron mean free path and the superconducting coherence length reveals that superconductivity in these systems is in the dirty limit, which tends to suppress nonconventional pairing and therefore challenges these expectations. Here, in LaAlO3/SrTiO3 interfaces, we show that precise control of the La/Al ratio during the epitaxial growth of LaAlO3, monitored by XPS and STEM-EELS measurements, allows us to finely tune the electron mobility, carrier density and the superconducting properties. Remarkably, our findings reveal electronic mobilities that surpass previous reports by up to 15-fold, with mean free paths comparable to the superconducting coherence length, thereby approaching the clean limit. In addition, we also show that in our extremely clean q-2DEGs, superconductivity can develop at low electron density, where electrons only populate low-energy dxy subbands. This is in sharp contrast to the conventional understanding of superconductivity in LaAlO3/SrTiO3 q-2DEGs, which relies solely on Cooper pairing in the high-energy dxy/dxz subbands. What makes this even more surprising is that the density of states in the dxy subbands is very low, which, according to the BCS theory, is considered detrimental to superconductivity.

* We acknowledge financial support from Projects No. PID2020-118479RBI00 and Severo Ochoa FUN-FUTURE (No. CEX2019-000917-S) of the Spanish Ministry of Science and Innovation (Grant No.MCIN/AEI/10.13039/501100011033) and by the Generalitat de Catalunya (2021 SGR 00445), and from the Swedish infrastructure for micro- and nanofabrication - MyFab. G.S. acknowledges financial support from the Beatriu de Pino´s Programme and the Ministry of Research and Universities of the Government of Catalonia, with research Grant No. 2019 BP 00207.

Presenters

  • Gyanendra Singh

    Institut de Ciència de Materials de Barcelona (ICMAB-CSIC)

Authors

  • Gyanendra Singh

    Institut de Ciència de Materials de Barcelona (ICMAB-CSIC)

  • Roger Guzman

    University of Chinese Academy of Sciences (UCAS), Beijing, China

  • Guilhem Saiz

    Laboratoire de Physique et d'Etude des Matériaux, ESPCI Paris, Université PSL, CNRS, Sorbonne Université, Paris, ESPCI Paris, Universite PSL, CNRS, Sorbonne Universite, Paris, France, ESPCI Paris

  • Wu Zhou

    University of Chinese Academy of Sciences (UCAS), Beijing, China

  • Jaume Gazquez

    Institut de Ciéncia de Materials de Barcelona (ICMAB-CSIC)

  • Jordi Fraxedas

    Catalan Institute of Nanoscience and Nanotechnology (ICN2), CSIC and BIST

  • Fereshteh Masoudinia

    Institut de Ciéncia de Materials de Barcelona (ICMAB-CSIC)

  • Dag Winkler

    Chalmers University of Technology, Gothenburg, Sweden

  • Tord Claeson

    Chalmers University of Technology, Gothenburg, Sweden

  • Nicolas Bergeal

    Laboratoire de Physique et d'Etude des Matériaux, ESPCI Paris, Université PSL, CNRS, Sorbonne Université, Paris, ESPCI Paris, Laboratoire de Physique et d'Etude des Matériaux, ESPCI Paris, PSL University, CNRS, Sorbonne Université, Paris, France

  • Gervasi Herranz

    Institut de Ciéncia de Materials de Barcelona (ICMAB-CSIC)

  • Alexei Kalaboukhov

    Chalmers University of Technology, Gothenburg, Sweden