Electronic Transport Properties of Two-Dimensional Violet Phosphorus-11

Violet Phosphorus (VP) is a 2D layered intrinsic p-type semiconducting Phosphorus allotrope. Because most known 2D semiconductors are n-type, finding new intrinsic p-type structures will allow for the further development of complementary n-p architectures and p-electronics without requiring doping of the material. This work explores the electrical properties of Violet Phosphorus-11 and its in-air degradation. Mechanical exfoliation of violet-P11 into few-layer-thick flakes was performed in a controlled atmosphere of inert gas. From these flakes, Field-effect Transistors (FETs) were built using Hall Bar geometry to calculate mobility and resistivity as a function of hole density in a cryostat. Atomic Force Microscopy then showed that violet-P11 experiences large area degradation faster than previously reported. A better understanding of VP's stability will help in the material's electric characterization and potential applications.