Photoluminescent from defects in isotopically enriched hexagonal boron nitride.

The hexagonal Boron Nitride (h-BN) has attracted significant attention due to its unique properties that enable advanced optoelectronic device fabrication. It has also been studied as a host of single photon emitters (quantum light emitters) like other two-dimensional materials. To better understand the electronic properties and lifetime of photoluminescence (PL) in hBN, we use photoluminescence (PL) and time-resolved photoluminescence (TR-PL) spectroscopy. Our observations indicate that narrow-width PL emission in the spectral region between 693 and 698 nm occurs at room temperature from states in the bandgap of hBN. These states may originate from lattice-embedded carbon atoms, which can potentially act as quantum light emitters that can be used for quantum technology applications.