Poster: Ultrafast Carrier Dynamics at Carrier Densities above Mott Density: Monolayer vs Multilayer MoS₂

Molybdenum Disulfide (MoS₂) is an intriguing material with several applications in optoelectronics, spintronics, and valleytronics. Scientific community continues to comprehend its carrier dynamics at different excitation conditions. However, its behavior at excitation densities exceeding Mott density (MD) is not well explored. In this work, we investigate the carrier dynamics of monolayer and multilayer MoS₂ at above MD. We show that despite the similarity in band structure around the K-point and the formation of A-exciton, there is a substantial difference in the dynamics of carriers reflecting the influence of the full band structures. In multilayer, excited carriers live for a longer time in an excited state and shows a saturation in signal, while in monolayer form, it shows quicker relaxation and linear behavior. This result is important for applications of MoS₂ requiring high excitation densities MoS₂ in high power detectors, lasers, and OPA.