Different concentrations of Ti4+ as a donor and thermoelectric/Electrical Properties of Bi2-xTixO3
ORAL
Abstract
Bi(2-x)TixO3 (x = 0, 0.01, 0.03. & 0.05) (BO-xT) ceramics are prepared by
conventional solid-state route followed by low sintering temperatures. X-ray
diffraction analyses show the presence of the monoclinic phase of Bi2O3. The
electrical conductivities at room temperature concerning the frequency (ranging
from 25 kHz to 5 MHz) and Seebeck Coefficient ranging from 50°C to 400°C were
measured. With an increase in Ti (dopant) content, the conductivity and Seebeck
Coefficient increased with the temperature increment. The BO-0.03T has the
highest Seebeck value (47 μV/°C), which shows a higher carrier concentration. In
terms of electrical conductivities, the BO-0.05T ceramic shows the maximum
electrical conductivity, i.e. 2.0 × 10−9 μS/m as compared to other samples, which
exhibit the presence of free electrons. Moreover, relative permittivity (dielectric
constant) and dielectric loss are also measured concerning the frequency at room
temperature to investigate the dielectric behaviour of the ceramics. This lowtemperature
sintering ceramics will open new applications in the domain of
electronic materials.
conventional solid-state route followed by low sintering temperatures. X-ray
diffraction analyses show the presence of the monoclinic phase of Bi2O3. The
electrical conductivities at room temperature concerning the frequency (ranging
from 25 kHz to 5 MHz) and Seebeck Coefficient ranging from 50°C to 400°C were
measured. With an increase in Ti (dopant) content, the conductivity and Seebeck
Coefficient increased with the temperature increment. The BO-0.03T has the
highest Seebeck value (47 μV/°C), which shows a higher carrier concentration. In
terms of electrical conductivities, the BO-0.05T ceramic shows the maximum
electrical conductivity, i.e. 2.0 × 10−9 μS/m as compared to other samples, which
exhibit the presence of free electrons. Moreover, relative permittivity (dielectric
constant) and dielectric loss are also measured concerning the frequency at room
temperature to investigate the dielectric behaviour of the ceramics. This lowtemperature
sintering ceramics will open new applications in the domain of
electronic materials.
* All authors very thankful to the Department of MaterialsEngineering, NED University of Engineering & Technology,Karachi, Pakistan; for experimental work and lab support tofinish this work with collaboration. This work was supportedthrough the Annual Funding track by the Deanship of ScientificResearch, Vice Presidency for Graduate Studies and ScientificResearch, King Faisal University, Saudi Arabia (Project No.AN000484).
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Presenters
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Adil Alshoaibi
King Faisal University
Authors
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Adil Alshoaibi
King Faisal University